Focused Ion and Electron Beam System Ethox NX5000 Series

Focused Ion and Electron Beam System Ethox NX5000 Series


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Product Description

The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability.  Ethos delivers high-resolution at low voltages combined with ion optics for nanoscale precision processing.

Specification

Product Description
Accelerating voltage

FIB (NX5000) : 0.5 kV – 30 kV

FIB (NX5200) : 0.5 kV – 30 kV

Ion Source

FIB (NX5000) : Ga liquid Metal Ion Source

FIB (NX2500) : Ga liquid Metal Ion Source

SIM resolution*

FIB (NX5000) : 4 nm @ 30 kV
                               60 nm @ 2 kV (Edge resolution)

FIB (NX5200) : 4 nm @ 30 kV
                               50 nm @ 2 kV (Edge resolution)

Beam current

FIB (NX5000) : 100 nA

FIB (NX5200) : 100 nA

Detectors

In-column secondary electron detector, SE (U)
In-column backscattered electron detector, BSE (U)
In-column backscattered electron detector, BSE (L)
Chamber mounted secondary electron detector, SE (L)

5-axis motorized stage (with feedback control)

X : 155 mm

Y : 155 mm

Z : 16.5 mm

R : 0 - 360° endless

SEM
Max. beam current

10 nA

Electron Source

Cold cathode field emission

SEM Resolution*

1.5 nm @ 1 kV, 0.7 nm @ 15 kV

Accelerating Voltage

0.1 kV – 30 kV

Resources

Focused Ion and Electron Beam System Ethos NX5000 Series.pdf

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