The newly developed FIB-SEM system from Hitachi, the NX9000 incorporates an optimized layout for true high-resolution serial sectioning to tackle the latest demands in 3D structural analysis and for TEM and 3DAP analyses. The NX9000 FIB-SEM system allows the highest precision in material processing for a wide range of areas relating to advanced materials, electronic devices, biological tissues, and multitude of other applications.
| SEM | |
|---|---|
| Electron Source | Cold cathode field emission source |
| Accelerating Voltage | 0.1 - 30 kV |
| Resolution | 2.1 nm@ 1 kV 1.6 nm@ 15 kV |
| FIB | |
| Ion Source | Ga liquid metal ion source |
| Accelerating voltage | 0.5 - 30 kV |
| Resolution | 4.0 nm@30 kV |
| Max probe current | 100 nA |
| General Characteristic | |
| Standard detector | In-column SED/In-column BSED/Chamber SED |
| Stage | X : 0 - 20 mm *2 Y : 0 - 20 mm *2 Z : 0 - 20 mm *2 θ : 0 - 360° *2 τ : -25 - 45° *2 |
| Maximum sample size | 6 mm x 6 mm, 2 mm thick |
| Real-time 3D analytical FIB-SEM NX9000.pdf |
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