Real-time 3D analystical FIB-SEM NX9000

Real-time 3D analystical FIB-SEM NX9000


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Product Description

The newly developed FIB-SEM system from Hitachi, the NX9000 incorporates an optimized layout for  true high-resolution serial sectioning to tackle the latest demands in 3D structural analysis and for TEM and 3DAP analyses.  The NX9000 FIB-SEM system allows the highest precision in material processing for a wide range of areas relating to advanced materials, electronic devices, biological tissues, and multitude of other applications.

Specification

SEM
Electron Source

Cold cathode field emission source

Accelerating Voltage

0.1 - 30 kV

Resolution

2.1 nm@ 1 kV

1.6 nm@ 15 kV

FIB
Ion Source

Ga liquid metal ion source

Accelerating voltage

0.5 - 30 kV

Resolution

4.0 nm@30 kV

Max probe current

100 nA

General Characteristic
Standard detector

In-column SED/In-column BSED/Chamber SED

Stage

X : 0 - 20 mm *2

Y : 0 - 20 mm *2

Z : 0 - 20 mm *2

θ : 0 - 360° *2

τ : -25 - 45° *2


Maximum sample size

6 mm x 6 mm, 2 mm thick

Resources

Real-time 3D analytical FIB-SEM NX9000.pdf

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